c o p y r igh t @ w i n s em i mic roelectronic s c o . , lt d . , a l l ri g h t r e s er v ed . wf wf wf wf f20n60s f20n60s f20n60s f20n60s wt-f034-rev.a1 nov.2013 silicon silicon silicon silicon n-channel n-channel n-channel n-channel mosfet mosfet mosfet mosfet features ? ultra low rdson ? ultra-low gate charge(typical 65 nc) ? 100% uis tested ? rohs compliant general description winsemi power mosfet is fabricated using advanced super junction technology.the resulting device has extremely low on resistance,making it especially suitable for applic ations which require superior power density and outstanding efficienc y. absolute maximum ratings symbol parameter value units v dss drain source voltage 600 v i d continuous drain current(@tc=25 ) (@ tc= 100 ) 20 13 a i dm drain current pulsed 1) 60 a v gs gate to source voltage 30 v e as single pulse avalanche energy 2) 700 mj i ar single pulse avalanche current 1) 20 a e a r repetitive avalanche energy 1) 20.5 mj p d total power dissipation(@tc=25 ) -derate above 25 34 0.28 w w/ t j junction temperature 150 t stg storage temperature -55~150 i s continuous diode forward current 20 a i s ,pulse diode pulse current 60 a thermal characteristics symbol parameter value units min typ max r qjc thermal resistance , junction -to -case - - 3.6 /w r qj a thermal resistance , junction -to - ambient - - 80 /w g d s
steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance wf wf wf wf f20 f20 f20 f20 n n n n 60s 60s 60s 60s 2 / 6 electrical characteristics(tc=25 ) characteristics symbol test condition min type max unit gate leakage current i gss v gs = 30 v,v ds =0v - - 100 na drain cut -off current i dss v ds = 600 v,v gs =0v - - 1 a drain -source breakdown voltage v (br)dss i d = 250 a ,v gs =0v 600 - - v gate threshold voltage v gs(th) v ds =v gs , i d = 250u a 2.5 - 4.5 v drain -source on resistance r ds(on) v gs =10v,i d = 10 a t j =25 t j =150 - - 0.13 0.39 0.15 - ? gate resistance r g f=1mhz,open drain - 1.8 - ? input capacitance c iss v ds = 25 v, v gs =0v, f=1mhz - 2100 pf reverse transfer capacitance c rss - 17 output capacitance c oss - 1700 tur n -on del a y time t d(on) v dd = 3 8 0v, i d = 10 a r g = 4.7 ? , v g s = 10v - 25 - rise time t r - 21 - tur n -off del a y time t d(o ff ) - 60 - fall time t f - 4 - total gate charge(gate-source plus gate-drain) qg v d s = 480 v, v gs = 0 to 10 v, i d = 10 a - 65 - nc gate-source charge qgs - 12 - gate-drain("miller") charge qgd - 31 - gate plateau voltage vplateau - 5.7 - source-drain ratings and characteristics(ta=25 ) characteristics symbol test condition min type max unit body d iode v oltage v sd i sd = 10 a,v gs =0v - - 1.4 v pulse diode forward current trr vr=50v,if=20a,di f /dt= 100a/ s - 520 - reverse recovery time qrr - 5.7 - peak reverse recovery current irrm - 19 - notes: 1. repetitive rating:pulse width limited by maximum junction temperature 2. i as =7a,v dd =60v ,r g =25 ,starting t j =25
steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance wf wf wf wf f20 f20 f20 f20 n n n n 60s 60s 60s 60s 3 / 6 fig.1 on-region characteristics fig.2 transfer characteristics fig.3 on-resistance variation vs drain current fig.4 threshold voltage vs. temperature fig. 6 on-resistance vs. temperature fig. 5 breakdown voltage vs. temperature
steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance wf wf wf wf f20 f20 f20 f20 n n n n 60s 60s 60s 60s 4 / 6 fig. 7 capacitance characteristics fig. 8 gate charge characteristics fig. 9 maximum safe operating area fig. 10 power dissipation vs. temperature fig. 11 transient thermal response curve
steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance wf wf wf wf f20 f20 f20 f20 n n n n 60s 60s 60s 60s 5 / 6 fig. 11 gate gate gate gate charge charge charge charge test test test test circuit circuit circuit circuit & & & & waveform waveform waveform waveform fig. 12 switching switching switching switching test test test test circuit circuit circuit circuit & & & & waveforms waveforms waveforms waveforms fig. 13 unclamped unclamped unclamped unclamped inductive inductive inductive inductive switching switching switching switching test test test test circuit circuit circuit circuit & & & & waveforms waveforms waveforms waveforms
steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance wf wf wf wf f20 f20 f20 f20 n n n n 60s 60s 60s 60s 6 / 6 to- to- to- to- 220 220 220 220 f f f f package package package package dimension dimension dimension dimension unit:mm
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